The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Sep. 22, 2011
Applicants:
Soo-byung Ko, Gyeonggi-do, KR;
Kee-joon OH, Gyeonggi-do, KR;
Sung-hyun Yoon, Gyeonggi-do, KR;
Soon-young Park, Gyeonggi-do, KR;
Inventors:
Soo-Byung Ko, Gyeonggi-do, KR;
Kee-Joon Oh, Gyeonggi-do, KR;
Sung-Hyun Yoon, Gyeonggi-do, KR;
Soon-Young Park, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/311 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming an insulation layer containing an impurity, forming a contact hole by etching the insulation layer, performing a treatment to decrease a concentration of the impurity on a surface of the insulation layer, and rinsing the contact hole.