The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Dec. 22, 2008
Applicants:
Fausto Piazza, Agrate Brianza, IT;
Alfonso Maurelli, Sulbiate, IT;
Inventors:
Fausto Piazza, Agrate Brianza, IT;
Alfonso Maurelli, Sulbiate, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Different types of transistors, such as memory cells, higher voltage, and higher performance transistors, may be formed on the same substrate. A transistor may be formed with a first polysilicon layer covered by a dielectric. A second polysilicon layer over the dielectric may be etched to form a sidewall spacer on the gate of the transistor. The sidewall spacer may be used to form sources and drains and to define sub-lithographic lightly doped drains. After removing the spacer, the underlying dielectric may protect the lightly doped drains.