The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
May. 29, 2012
Harald Gossner, Riemerling, DE;
Thomas Schulz, Heverlee, BE;
Christian Russ, Diedorf, DE;
Gerhard Knoblinger, Villach, AT;
Harald Gossner, Riemerling, DE;
Thomas Schulz, Heverlee, BE;
Christian Russ, Diedorf, DE;
Gerhard Knoblinger, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
In a method for producing a thyristor, first and second connection regions are formed on or above a substrate; the first connection region is doped with dopant atoms of a first conductivity type and the second connection region is doped with dopant atoms of a second conductivity type; first and second body regions are formed between the connection regions, wherein the first body region is formed between the first connection region and second body region, and the second body region is formed between the first body region and second connection region; the first body region is doped with dopant atoms of the second conductivity type and the second body region is doped with dopant atoms of the first conductivity type, wherein the dopant atoms are in each case introduced into the respective body region using a Vt implantation method; a gate region is formed on or above the body regions.