The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Jul. 20, 2011
Dong-suk Shin, Yongin-si, KR;
Yong-joo Lee, Osan-si, KR;
Dong-hyuk Kim, Seongnam-si, KR;
Myung-sun Kim, Hwaseong-si, KR;
Hoi-sung Chung, Hwaseong-si, KR;
Dong-Suk Shin, Yongin-si, KR;
Yong-Joo Lee, Osan-si, KR;
Dong-Hyuk Kim, Seongnam-si, KR;
Myung-Sun Kim, Hwaseong-si, KR;
Hoi-Sung Chung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of evaluating an epitaxial growing process includes forming a mold layer on each of a plurality of substrates, forming a photoresist pattern on each mold layer, the photoresist pattern having opening portions, a total area of a bottom portion of the opening portions being different for each substrate, patterning each mold layer to expose a surface portion of the substrate to form an evaluation pattern on each substrate, evaluation patterns including opening portions corresponding to the opening portion in the photoresist pattern, determining substrate opening ratios for each substrate based on the opening portions in the evaluation pattern thereon, the substrate opening ratios being different for each substrate, performing a selective epitaxial process on each substrate to form an epitaxial layer, and evaluating characteristics of the epitaxial layer for each substrate to determine an optimal substrate opening ratio.