The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2013

Filed:

May. 27, 2011
Applicants:

Cha-hsin Lin, Tainan, TW;

Tzu-kun Ku, Hsinchu, TW;

Inventors:

Cha-Hsin Lin, Tainan, TW;

Tzu-Kun Ku, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacturing method of a semiconductor structure includes providing a substrate having an upper surface and a bottom surface. First openings are formed in the substrate. An oxidization process is performed to oxidize the substrate having the first openings therein to form an oxide-containing material layer, and the oxide-containing material layer has second openings therein. A conductive material is filled into the second openings to form conductive plugs. A first device layer is formed a first surface of the oxide-containing material layer, and is partially or fully electrically connected to the conductive plugs. A second device layer is formed on a second surface of the oxide-containing material layer, and is partially or fully electrically connected to the conductive plugs.


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