The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Dec. 11, 2003
Wing K. Luk, Chappaqua, NY (US);
Robert H. Dennard, Croton on Hudson, NY (US);
Wing K. Luk, Chappaqua, NY (US);
Robert H. Dennard, Croton on Hudson, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A gated diode memory cell is provided, including one or more transistors, such as field effect transistors ('FETs'), and a gated diode in signal communication with the FETs such that the gate of the gated diode is in signal communication with the source of a first FET, wherein the gate of the gated diode forms one terminal of the storage cell and the source of the gated diode forms another terminal of the storage cell, the drain of the first FET being in signal communication with a bitline ('BL') and the gate of the first FET being in signal communication with a write wordline (“WLw”), and the source of the gated diode being in signal communication with a read wordline (“WLr”).