The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2013

Filed:

Apr. 10, 2009
Applicants:

April D. Schricker, Palo Alto, CA (US);

Andy Fu, San Ramon, CA (US);

Michael Konevecki, San Jose, CA (US);

Steven Maxwell, Sunnyvale, CA (US);

Inventors:

April D. Schricker, Palo Alto, CA (US);

Andy Fu, San Ramon, CA (US);

Michael Konevecki, San Jose, CA (US);

Steven Maxwell, Sunnyvale, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube ('CNT') film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.


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