The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Apr. 21, 2011
Tsuo-wen LU, Kaohsiung, TW;
I-ming Lai, Kaohsiung, TW;
Tsung-yu Hou, Tainan, TW;
Chien-liang Lin, Taoyuan County, TW;
Wen-yi Teng, Kaohsiung, TW;
Shao-wei Wang, Taichung, TW;
Yu-ren Wang, Tainan, TW;
Chin-cheng Chien, Tainan, TW;
Tsuo-Wen Lu, Kaohsiung, TW;
I-Ming Lai, Kaohsiung, TW;
Tsung-Yu Hou, Tainan, TW;
Chien-Liang Lin, Taoyuan County, TW;
Wen-Yi Teng, Kaohsiung, TW;
Shao-Wei Wang, Taichung, TW;
Yu-Ren Wang, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating an epitaxial layer includes providing a substrate. The substrate is etched to form at least a recess within the substrate. A surface treatment is performed on the recess to form a Si—OH containing surface. An in-situ epitaxial process is performed to form an epitaxial layer within the recess, wherein the epitaxial process is performed in a hydrogen-free atmosphere and at a temperature lower than 800° C.