The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Feb. 18, 2011
Applicants:
Jung Ho Kim, Gyeonggi-do, KR;
Kihyun Hwang, Gyeonggi-do, KR;
Sangryol Yang, Gyeonggi-do, KR;
Yong-hoon Sang, Gyeonggi-do, KR;
Ju-eun Kim, Seoul, KR;
Inventors:
Jung Ho Kim, Gyeonggi-do, KR;
Kihyun Hwang, Gyeonggi-do, KR;
Sangryol Yang, Gyeonggi-do, KR;
Yong-Hoon Sang, Gyeonggi-do, KR;
Ju-Eun Kim, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/8244 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of fabricating a semiconductor device include alternatingly and repeatedly stacking sacrificial layers and first insulating layers on a substrate, forming an opening penetrating the sacrificial layers and the first insulating layers, and forming a spacer on a sidewall of the opening, wherein a bottom surface of the opening is free of the spacer. A semiconductor layer is formed in the opening. Related devices are also disclosed.