The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Sep. 06, 2011
Taisuke Sato, Kanagawa-ken, JP;
Masanobu Ando, Kanagawa-ken, JP;
Hajime Nago, Kanagawa-ken, JP;
Koichi Tachibana, Kanagawa-ken, JP;
Toshiyuki Oka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Taisuke Sato, Kanagawa-ken, JP;
Masanobu Ando, Kanagawa-ken, JP;
Hajime Nago, Kanagawa-ken, JP;
Koichi Tachibana, Kanagawa-ken, JP;
Toshiyuki Oka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.