The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Sep. 11, 2007
Applicants:
Neng-kuo Chen, Hsinchu, TW;
Chao-ching Hsieh, Hsinchu County, TW;
Chien-chung Huang, Taichung Hsien, TW;
Inventors:
Neng-Kuo Chen, Hsinchu, TW;
Chao-Ching Hsieh, Hsinchu County, TW;
Chien-Chung Huang, Taichung Hsien, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a silicon nitride gap-filling layer is provided. A pre-multi-step formation process is performed to form a stacked layer constituting as a dense film on a substrate. Then, a post-single step deposition process is conducted to form a cap layer constituting as a sparse film on the stacked layer, wherein the cap layer has a thickness of at least 10% of the total film thickness.