The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Jun. 20, 2011
Chih-chung Wang, Hsinchu, TW;
Wei-lun Hsu, Hsin-Chu Hsien, TW;
Te-yuan Wu, Hsinchu, TW;
Ke-feng Lin, Taipei, TW;
Shan-shi Huang, Hsinchu, TW;
Ming-tsung Lee, Yilan County, TW;
Wen-fang Lee, Hsin-Chu, TW;
Chih-Chung Wang, Hsinchu, TW;
Wei-Lun Hsu, Hsin-Chu Hsien, TW;
Te-Yuan Wu, Hsinchu, TW;
Ke-Feng Lin, Taipei, TW;
Shan-Shi Huang, Hsinchu, TW;
Ming-Tsung Lee, Yilan County, TW;
Wen-Fang Lee, Hsin-Chu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin Chu, TW;
Abstract
The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first doped region, a doped channel region disposed in the high-voltage region and in contact with the second doped region and the deep well, and a third doped region disposed in the high-voltage well. The high-voltage well has a first conductive type, and the deep well, the first doped region, the second doped region, the doped channel region, and the third doped region have a second conductive type different from the first conductive type.