The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2013

Filed:

Jun. 17, 2010
Applicants:

Akihiro Kojima, Kanagawa-ken, JP;

Yoshiaki Sugizaki, Kanagawa-ken, JP;

Hideki Shibata, Kanagawa-ken, JP;

Hideo Tamura, Kanagawa-ken, JP;

Tetsuro Komatsu, Fukuoka-ken, JP;

Masayuki Ishikawa, Kanagawa-ken, JP;

Inventors:

Akihiro Kojima, Kanagawa-ken, JP;

Yoshiaki Sugizaki, Kanagawa-ken, JP;

Hideki Shibata, Kanagawa-ken, JP;

Hideo Tamura, Kanagawa-ken, JP;

Tetsuro Komatsu, Fukuoka-ken, JP;

Masayuki Ishikawa, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.


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