The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Sep. 08, 2011
Jun-kyu Yang, Seoul, KR;
Hong-suk Kim, Yongin-si, KR;
Ju-yul Lee, Seoul, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Jae-young Ahn, Seongnam-si, KR;
Jun-Kyu Yang, Seoul, KR;
Hong-Suk Kim, Yongin-si, KR;
Ju-Yul Lee, Seoul, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
Jae-Young Ahn, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes gate structures including a tunnel insulating layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially disposed on a substrate. The control gate includes an impurity doped polysilicon layer pattern and a metal layer pattern. The gate structures are spaced apart from each other on the substrate. A capping layer pattern is disposed on a sidewall portion of the metal layer pattern and includes a metal oxide. An insulating layer covers the gate structures and the capping layer pattern. The insulating layer is formed on the substrate and includes an air-gap therein.