The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Jun. 06, 2012
Edward Yi Chang, Hsinchu County, TW;
Lu-che Huang, New Taipei, TW;
Chia-hua Chang, Taichung, TW;
Yueh-chin Lin, New Taipei, TW;
Wei-hua Chieng, Hsinchu, TW;
Shih-chien Liu, Hsinchu, TW;
Edward Yi Chang, Hsinchu County, TW;
Lu-Che Huang, New Taipei, TW;
Chia-Hua Chang, Taichung, TW;
Yueh-Chin Lin, New Taipei, TW;
Wei-Hua Chieng, Hsinchu, TW;
Shih-Chien Liu, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A method for forming a T-shaped gate is provided. The method includes providing a substrate. Then, a photoresist structure is formed over the substrate. The photoresist structure includes two development rates. Next, a mask with an opening is formed over the photoresist structure to pattern the photoresist structure. An angle exposure is applied to the photoresist structure, and the exposed photoresist structure is developed to form a T-shaped notch. A width of the T-shaped notch is gradually reduced from a top portion thereof to a bottom portion to expose a surface of the substrate. Then, a gate metal is deposited in the T-shaped notch. Thereafter, the patterned photoresist structure is removed to form the T-shaped gate.