The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Apr. 12, 2010
Chen-chung Du, Hsinchu, TW;
Sheng-lang Lee, Hsinchu County, TW;
Muh-wang Liang, Miaoli County, TW;
Jen-rong Huang, Hsinchu, TW;
Chia-hao Chang, Hsinchu, TW;
Chen-Chung Du, Hsinchu, TW;
Sheng-Lang Lee, Hsinchu County, TW;
Muh-Wang Liang, Miaoli County, TW;
Jen-Rong Huang, Hsinchu, TW;
Chia-Hao Chang, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Hα and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Hα within an allowed range of a target value for improving film depositing rate.