The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Mar. 25, 2011
Yu-shu Shen, Chiayi County, TW;
Kun-hsien Lin, Hsinchu, TW;
Che-hao Chuang, Hsinchu, TW;
Ryan Hsin-chin Jiang, Taipei, TW;
Yu-Shu Shen, Chiayi County, TW;
Kun-Hsien Lin, Hsinchu, TW;
Che-Hao Chuang, Hsinchu, TW;
Ryan Hsin-Chin Jiang, Taipei, TW;
Amazing Microelectronic Corp., New Taipei, TW;
Abstract
A low capacitance transient voltage suppressor is disclosed. The suppressor comprises an N-type heavily doped substrate and an epitaxial layer formed on the substrate. At least one steering diode structure formed in the epitaxial layer comprises a diode lightly doped well and a first P-type lightly doped well, wherein a P-type heavily doped area is formed in the diode lightly doped well and a first N-type heavily doped area and a second P-type heavily doped area are formed in the first P-type lightly doped well. A second P-type lightly doped well having two N-type heavily doped areas is formed in the epitaxial layer. In addition, an N-type heavily doped well and at least one deep isolation trench are formed in the epitaxial layer, wherein the trench has a depth greater than or equal to depths of all the doped wells, so as to separate at least one doped well.