The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2013

Filed:

Jan. 13, 2011
Applicant:

Chao-ching Hsieh, Tai-Nan, TW;

Inventor:

Chao-Ching Hsieh, Tai-Nan, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a plug structure includes the following steps. A substrate is provided. The substrate includes a MOS device with a source/drain region, a dielectric layer disposed on the MOS device, an opening defined in the dielectric layer, and a first glue layer disposed on a sidewall and a bottom of the opening. A portion of the first glue layer disposed at the bottom of the opening is punched through to expose the source/drain region. A barrier layer is formed over the substrate after the first glue layer is punched through. The opening is filled with a conductive structure, wherein the barrier layer disposed at the bottom of the opening is remained when the conductive structure is filled into the opening.


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