The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
May. 27, 2011
Shin-chuan Huang, Tainan County, TW;
Guang-yaw Hwang, Tainan County, TW;
Hsiang-ying Wang, Chiai, TW;
Yu-hsiang Hung, Tainan, TW;
I-chang Wang, Tainan, TW;
Shin-Chuan Huang, Tainan County, TW;
Guang-Yaw Hwang, Tainan County, TW;
Hsiang-Ying Wang, Chiai, TW;
Yu-Hsiang Hung, Tainan, TW;
I-Chang Wang, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device comprising a silicon substrate, a gate structure and a heteroatom-containing epitaxial structure is provided. The gate structure is disposed on a surface of the silicon substrate. The heteroatom-containing epitaxial structure is disposed adjacent to the gate structure and has a major portion and an extension portion, wherein the major portion virtual vertically extends downwards into the silicon substrate from the surface; and the extension portion further extends downwards into the silicon substrate with a tapered cross-section continuing with the major portion.