The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Dec. 21, 2010
Chunming Zhou, Milipitas, CA (US);
Liqi Wu, Santa Clara, CA (US);
Karthik Colinjivadi, San Jose, CA (US);
Emery Kuo, Sunnyvale, CA (US);
Huatan Qiu, Dublin, CA (US);
Kiejin Park, San Jose, CA (US);
Chunming Zhou, Milipitas, CA (US);
Liqi Wu, Santa Clara, CA (US);
Karthik Colinjivadi, San Jose, CA (US);
Emery Kuo, Sunnyvale, CA (US);
Huatan Qiu, Dublin, CA (US);
KieJin Park, San Jose, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.