The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Nov. 16, 2010
Chien-fu Tseng, Yunlin County, TW;
Kuo-hsin Lai, Hsinchu County, TW;
Chien-Fu Tseng, Yunlin County, TW;
Kuo-Hsin Lai, Hsinchu County, TW;
Phison Electronics Corp., Miaoli, TW;
Abstract
A memory storage device, a memory controller, and a log likelihood ratio (LLR) generation method are provided. A read data corresponding to a first storage state is obtained from memory cells of a flash memory chip in the memory storage device by using bit data read voltages. An error checking and correcting procedure is performed on the read data to obtain a second storage state corresponding to the read data when the read data is written. An amount of storage error is obtained in storage states satisfying a statistic number, and a storage error means that data is in the second storage state when being written and is in the first storage state when being read. A logarithmic operation is executed according to the statistic number, an amount of the storage states, and the amount of storage error to generate a first LLR of the read data.