The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Dec. 22, 2009
Ting-chang Chang, Taipei Hsien, TW;
Shih-ching Chen, Taipei Hsien, TW;
Te-chih Chen, Taipei Hsien, TW;
Fu-yen Jian, Taipei Hsien, TW;
Yong-en Syu, Taipei Hsien, TW;
Ting-Chang Chang, Taipei Hsien, TW;
Shih-Ching Chen, Taipei Hsien, TW;
Te-Chih Chen, Taipei Hsien, TW;
Fu-Yen Jian, Taipei Hsien, TW;
Yong-En Syu, Taipei Hsien, TW;
Acer Incorporated, Taipei Hsien, TW;
Abstract
There is a method for enabling a SONOS transistor to be used as both a switch and a memory. FN tunneling is carried out through the source or drain of the transistor, so as to further change the state of electrons stored in an upper charge storage layer adjacent to the drain or source, and the variation in gate-induced drain leakage is used to recognize the memory state of the drain and source. A stable threshold voltage of the transistor is always maintained during this operation. The present invention enables one single transistor having dual features of switch and memory, while being provided with a two-bit memory effect, thus providing a higher memory density in comparison with a general transistor.