The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Nov. 12, 2010
Ying Cheng Chuang, Taoyuan County, TW;
Ping Cheng Hsu, Taipei, TW;
Sheng Wei Yang, Taoyuan County, TW;
Ming Cheng Chang, Taipei County, TW;
Hung Ming Tsai, Kaohsiung, TW;
Ying Cheng Chuang, Taoyuan County, TW;
Ping Cheng Hsu, Taipei, TW;
Sheng Wei Yang, Taoyuan County, TW;
Ming Cheng Chang, Taipei County, TW;
Hung Ming Tsai, Kaohsiung, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A memory device includes a plurality of isolations and trench fillers arranged in an alternating manner in a direction, a plurality of mesa structures between the isolations and trench fillers, and a plurality of word lines each overlying a side surface of the respective mesa. In one embodiment of the present invention, the width measured in the direction of the trench filler is smaller than that of the isolation, each mesa structure includes at least one paired source/drain regions and at least one channel base region corresponding to the paired source/drain regions, and each of the word lines is on a side surface of the mesa structure, adjacent the respective isolation, and is arranged adjacent the channel base region.