The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Oct. 15, 2010
Fang-mei Chao, Taichung, TW;
Ming-i Chen, Hsinchu, TW;
Ying-ko Chin, Hsinchu, TW;
Yi-chiao Wang, Hsinchu, TW;
Fang-Mei Chao, Taichung, TW;
Ming-I Chen, Hsinchu, TW;
Ying-Ko Chin, Hsinchu, TW;
Yi-Chiao Wang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A CMOS structure includes a PMOS portion and an NMOS portion isolated from each other via a P-well region disposed next to the PMOS portion and an N-well region disposed between the P-well region and the NMOS portion, an insulation layer overlying at least the N-well region, and a pad structure disposed over the N-well region. The pad structure further includes: a pad body disposed on the insulation layer; and at least one contact plug penetrating through the insulation layer, having one end coupled to the pad body and the other end coupled to a contact zone in the N-well region; wherein the contact zone is interfaced with the N-well region with P-type dopants.