The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Apr. 26, 2010
Applicants:
Yi MA, Santa Clara, CA (US);
Chakravarthy Gopalan, Santa Clara, CA (US);
Antonio R. Gallo, San Jose, CA (US);
Janet Wang, Los Altos, CA (US);
Inventors:
Yi Ma, Santa Clara, CA (US);
Chakravarthy Gopalan, Santa Clara, CA (US);
Antonio R. Gallo, San Jose, CA (US);
Janet Wang, Los Altos, CA (US);
Assignee:
Adesto Technologies Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 29/04 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A conductive bridging memory cell may include an ion conductor layer formed over an active electrode that is a source of conductive ions for the ion conductor; a conductive layer; and a barrier layer formed below the active layer and in contact with the conductive, the barrier layer substantially preventing a movement of conductive ions therethrough.