The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Feb. 17, 2012
Stoyan Nihtianov, Eindhoven, NL;
Arie Johan Van Der Sijs, Veldhoven, NL;
Bearrach Moest, Eindhoven, NL;
Petrus Wilhelmus Josephus Maria Kemper, Waalre, NL;
Marc Antonius Maria Haast, Eindhoven, NL;
Gerardus Wilhelmus Petrus Baas, Weert, NL;
Lis Karen Nanver, Zoetermeer, NL;
Francesco Sarubbi, Delft, NL;
Antonius Andreas Johannes Schuwer, Waalwijk, NL;
Gregory Micha Gommeren, Wouw, NL;
Martijn Pot, Den Ham, NL;
Thomas Ludovicus Maria Scholtes, Dordrecht, NL;
Stoyan Nihtianov, Eindhoven, NL;
Arie Johan Van Der Sijs, Veldhoven, NL;
Bearrach Moest, Eindhoven, NL;
Petrus Wilhelmus Josephus Maria Kemper, Waalre, NL;
Marc Antonius Maria Haast, Eindhoven, NL;
Gerardus Wilhelmus Petrus Baas, Weert, NL;
Lis Karen Nanver, Zoetermeer, NL;
Francesco Sarubbi, Delft, NL;
Antonius Andreas Johannes Schuwer, Waalwijk, NL;
Gregory Micha Gommeren, Wouw, NL;
Martijn Pot, Den Ham, NL;
Thomas Ludovicus Maria Scholtes, Dordrecht, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.