The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2013
Filed:
Mar. 30, 2011
Huai-yu Cheng, Hsinchu, TW;
Chieh-fang Chen, Panciao, TW;
Hsiang-lan Lung, Dobbs Ferry, NY (US);
Yen-hao Shih, Elmsford, NY (US);
Simone Raoux, New York, NY (US);
Matthew J. Breitwisch, Pound Ridge, NY (US);
Huai-Yu Cheng, Hsinchu, TW;
Chieh-Fang Chen, Panciao, TW;
Hsiang-Lan Lung, Dobbs Ferry, NY (US);
Yen-Hao Shih, Elmsford, NY (US);
Simone Raoux, New York, NY (US);
Matthew J. Breitwisch, Pound Ridge, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.