The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Jul. 15, 2011
Wen-yueh Jang, Hsinchu, TW;
Wen-Yueh Jang, Hsinchu, TW;
Windbond Electronics Corp., Taichung, TW;
Abstract
A semiconductor device and a method for fabricating the same are described. The semiconductor device includes a well of a first conductive type, first doped regions of a second conductive type, gates of the second conductive type, second doped regions of the first conductive type, and isolation structures. The well is disposed in a substrate. The first doped regions are disposed in the well. The first doped regions are arranged in parallel and extend along a first direction. The gates are disposed on the substrate. The gates are arranged in parallel and extend along a second direction different from the first direction. One of the first doped regions is electrically connected to one of the gates. Each of the second doped regions is disposed in the first doped regions between two adjacent gates. Each of the isolation structures is disposed in the substrate between two adjacent first doped regions.