The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2013

Filed:

Apr. 15, 2008
Applicants:

Masanobu Hatanaka, Susono, JP;

Osamu Irino, Susono, JP;

Michio Ishikawa, Susono, JP;

Inventors:

Masanobu Hatanaka, Susono, JP;

Osamu Irino, Susono, JP;

Michio Ishikawa, Susono, JP;

Assignee:

Ulvac, Inc., Chigasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/511 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/06 (2006.01); C23C 16/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2(where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages.


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