The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2013

Filed:

Dec. 07, 2010
Applicants:

Guoheng Zhao, Milpitas, CA (US);

Alex Salnik, San Jose, CA (US);

Lena Nicolaides, Castro Valley, CA (US);

Ady Levy, Sunnyvale, CA (US);

Inventors:

Guoheng Zhao, Milpitas, CA (US);

Alex Salnik, San Jose, CA (US);

Lena Nicolaides, Castro Valley, CA (US);

Ady Levy, Sunnyvale, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 27/08 (2006.01); G01R 31/308 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method may include illuminating a first area of a semiconductor utilizing a light source. The method may also include measuring at least one characteristic of electrical energy transmission utilizing a probe for placing at least one of at or near the illuminated first area of the semiconductor. The method may further include varying the measured at least one characteristic of the electrical energy transmission generated by the light from the light source incident upon the semiconductor while maintaining an intensity of the light source. Further, the method may include determining a sheet resistance for the junction of the semiconductor utilizing the varied at least one characteristic of the electrical energy transmission.


Find Patent Forward Citations

Loading…