The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Apr. 28, 2010
Takashi Nakagawa, Hachiouj, JP;
Naomu Kitano, Machida, JP;
Kazuaki Matsuo, Tokyo, JP;
Motomu Kosuda, Machida, JP;
Toru Tatsumi, Tokyo, JP;
Takashi Nakagawa, Hachiouj, JP;
Naomu Kitano, Machida, JP;
Kazuaki Matsuo, Tokyo, JP;
Motomu Kosuda, Machida, JP;
Toru Tatsumi, Tokyo, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
This invention provides a semiconductor device having a field effect transistor comprising a gate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. In the semiconductor device, a gate insulating filmon a silicon substratehas a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layerprovided on the gate insulating filmand containing Ti and N, a second metal nitride layercontaining Ti and N, and a polycrystalline silicon layer, in the first metal nitride layer, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1<X1 <1.8, and in the second metal nitride layer, the molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X2 is 1.8≦X2.