The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Feb. 07, 2011
Applicants:
Hans-joachim Schulze, Ottobrunn, DE;
Franz-josef Niedernostheide, Münster, DE;
Uwe Kellner-werdehausen, Leutenbach, DE;
Reiner Barthelmess, Soest, DE;
Inventors:
Hans-Joachim Schulze, Ottobrunn, DE;
Franz-Josef Niedernostheide, Münster, DE;
Uwe Kellner-Werdehausen, Leutenbach, DE;
Reiner Barthelmess, Soest, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.