The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Jan. 14, 2011
Applicants:
Chin-wei HU, Hsin-Chu, TW;
Ching-sang Chuang, Hsin-Chu, TW;
Chia-yu Chen, Hsin-Chu, TW;
Inventors:
Assignee:
AU Optronics Corporation, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract
This invention provides a transistor with an etching stop layer and a manufacturing method thereof. The transistor structure includes a substrate, a crystalline semiconductor layer, an etching stop structure, an ohmic contact layer, a source, a drain, a gate insulating layer, and a gate. The manufacturing method is performed by patterning the ohmic contact layer and the crystalline semiconductor layer at the same time with the same mask; and patterning the ohmic contact layer and the source/drain layer at the same time with another the same mask.