The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Oct. 02, 2009
Jinesh B. P. Kochupurackal, Taman Jurong, SG;
Robertus A. M. Wolters, Eindhoven, NL;
Michael A. A. Zandt, Veldhoven, NL;
Jinesh B. P. Kochupurackal, Taman Jurong, SG;
Robertus A. M. Wolters, Eindhoven, NL;
Michael A. A. Zandt, Veldhoven, NL;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A phase change memory cell, e.g. a line-cell (), and fabrication thereof, the cell comprising: two electrodes (); phase change memory material () and a dielectric barrier (). The dielectric barrier () is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phase change memory material (). A contact () made of phase change memory material may also be provided. The dielectric barrier () is substantially uniform e.g. of substantially uniform thickness, e.g. ≧5 nm.