The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2013
Filed:
Mar. 01, 2010
Shin Hashimoto, Itami, JP;
Katsushi Akita, Itami, JP;
Kensaku Motoki, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Shin Hashimoto, Itami, JP;
Katsushi Akita, Itami, JP;
Kensaku Motoki, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Koha Co., Ltd., Tokyo, JP;
Abstract
Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S, a buffer layercomprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surfaceof a gallium oxide substrate. After the growth of the buffer layer, while supplying a gas G, which contains hydrogen and nitrogen, into a growth reactor, the gallium oxide substrateand the buffer layerare exposed to an atmosphere in the growth reactorat 1050 Celsius degrees. A Group III nitride semiconductor layeris grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layercan be comprised of GaN and AlGaN. When the Group III nitride semiconductor layeris formed of these materials, excellent crystal quality is obtained on the modified buffer layer