The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Nov. 18, 2010
Guan-wei Wu, Hsinchu, TW;
I-chen Yang, Hsinchu, TW;
Yao-wen Chang, Hsinchu, TW;
Tao-cheng LU, Hsinchu, TW;
Guan-Wei Wu, Hsinchu, TW;
I-Chen Yang, Hsinchu, TW;
Yao-Wen Chang, Hsinchu, TW;
Tao-Cheng Lu, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A non-volatile memory and a manufacturing method thereof and a method for operating a memory cell are provided. The non-volatile memory includes a substrate, first and second doped regions, a charged-trapping structure, first and second gates and an inter-gate insulation layer. The first and second doped regions are disposed in the substrate and extend along a first direction. The first and second doped regions are arranged alternately. The charged-trapping structure is disposed on the substrate. The first and second gates are disposed on the charged-trapping structure. Each first gate is located above one of the first doped regions. The second gates extend along a second direction and are located above the second doped regions. The inter-gate insulation layer is disposed between the first gates and the second gates. Adjacent first and second doped regions and the first gate, the second gate and the charged-trapping structure therebetween define a memory cell.