The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Dec. 10, 2010
Hiroyuki Fujimoto, Tokyo, JP;
Hiroyuki Fujimoto, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method of forming a semiconductor device includes the following processes. A groove is formed in a semiconductor substrate. A gate insulating film is formed on an inside wall of the groove. A buried gate electrode is formed on the gate insulating film and on a bottom portion of the groove. A cap insulating film covering the buried gate electrode is formed in an upper portion of the groove. The cap insulating film has a top surface which is different in level from a top surface of the semiconductor substrate. A first inter-layer insulating film is formed on the top surface of the semiconductor substrate and on the top surface of the cap insulating film. The first inter-layer insulating film with a flat top surface fills a gap in level between the top surface of the semiconductor substrate and the top surface of the cap insulating film.