The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Apr. 20, 2011
Shun-wei Lan, Taipei, TW;
Jieh-jang Chen, Hsinchu, TW;
Shih-wei Lin, Taipei, TW;
Feng-jia Shiu, Jhudong Township, TW;
Hung Chang Hsieh, Hsinchu, TW;
Shun-Wei Lan, Taipei, TW;
Jieh-Jang Chen, Hsinchu, TW;
Shih-Wei Lin, Taipei, TW;
Feng-Jia Shiu, Jhudong Township, TW;
Hung Chang Hsieh, Hsinchu, TW;
Abstract
A method for planarizing a semiconductor device includes providing a substrate having at least one opening therein, each opening defining a lower portion and an upper portion; coating a light sensitive material layer over the substrate, the light sensitive material layer covering the lower and upper portions of the at least one opening; etching back the light sensitive material layer to expose the upper portion of the at least one opening; repeating the steps of coating and etching to remove a predetermined amount below the upper portion of the at least one opening; depositing an insulating layer over the substrate; and planarizing the insulating layer until the upper portion of the at least one opening is exposed.