The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jun. 23, 2011
Kamel Benaissa, Dallas, TX (US);
Greg C. Baldwin, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
Shashank S. Ekbote, Allen, TX (US);
Kamel Benaissa, Dallas, TX (US);
Greg C. Baldwin, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
Shashank S. Ekbote, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit is disclosed having symmetric and asymmetric MOS transistors of the same polarity, oriented perpendicularly to each other, formed by concurrent halo ion, LDD ion and/or S/D ion implant processes using angled, rotated sub-implants which vary the tilt angle, dose and/or energy between rotations. Implanted halo, LDD and/or S/D source and drain regions formed by angled subimplants may have different extents of overlap with, or lateral separation from, gates of the two types of transistors, producing transistors with two different sets of electrical properties. A process for concurrently fabricating the two types of transistors is also disclosed. Specific embodiments of processes for concurrently forming symmetric and asymmetric transistors are disclosed.