The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Feb. 22, 2011
Applicants:
Chun-hsien Lin, Tainan County, TW;
Chao-ching Hsieh, Tainan, TW;
Inventors:
Chun-Hsien Lin, Tainan County, TW;
Chao-Ching Hsieh, Tainan, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device including a substrate, a gate structure, a spacer and source/drain regions is provided. The gate structure is on the substrate, wherein the gate structure includes, from bottom to top, a high-k layer, a work function metal layer, a wetting layer and a metal layer. The spacer is on a sidewall of the gate structure. The source/drain regions are in the substrate beside the gate structure.