The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Feb. 12, 2009
Harald Gossner, Riemerling, DE;
Ramgopal Rao, Mumbai, IN;
Angada Sachid, Mumbai, IN;
Ashish Pal, Mumbai, IN;
Ram Asra, Mumbai, IN;
Harald Gossner, Riemerling, DE;
Ramgopal Rao, Mumbai, IN;
Angada Sachid, Mumbai, IN;
Ashish Pal, Mumbai, IN;
Ram Asra, Mumbai, IN;
Infineon Technologies AG, Neubiberg, DE;
Abstract
In an embodiment, a semiconductor device is provided. The semiconductor device may include a substrate having a main processing surface, a first source/drain region comprising a first material of a first conductivity type, a second source/drain region comprising a second material of a second conductivity type, wherein the second conductivity type is different from the first conductivity type, a body region electrically coupled between the first source/drain region and the second source/drain region, wherein the body region extends deeper into the substrate than the first source/drain region in a first direction that is perpendicular to the main processing surface of the substrate, a gate dielectric disposed over the body region, and a gate region disposed over the gate dielectric, wherein the gate region overlaps with at least a part of the first source/drain region and with a part of the body region in the first direction.