The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jun. 28, 2010
Arito Ogawa, Toyama, JP;
Sadayoshi Horii, Toyama, JP;
Taketoshi Sato, Toyama, JP;
Hideharu Itatani, Nanto, JP;
Nobuyuki Mise, Kokubunji, JP;
Osamu Tonomura, Odamara, JP;
Arito Ogawa, Toyama, JP;
Sadayoshi Horii, Toyama, JP;
Taketoshi Sato, Toyama, JP;
Hideharu Itatani, Nanto, JP;
Nobuyuki Mise, Kokubunji, JP;
Osamu Tonomura, Odamara, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device. In the method, an aluminum-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminum precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminum precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminum-containing insulation film is formed on the aluminum-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.