The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Dec. 03, 2010
Sang-hoon Ahn, Hwaseong-si, KR;
Gil-heyun Choi, Seoul, KR;
Jong-myeong Lee, Seongnam-si, KR;
Sang-don Nam, Seoul, KR;
Kyu-hee Han, Incheon, KR;
Sang-Hoon Ahn, Hwaseong-si, KR;
Gil-Heyun Choi, Seoul, KR;
Jong-Myeong Lee, Seongnam-si, KR;
Sang-Don Nam, Seoul, KR;
Kyu-Hee Han, Incheon, KR;
Abstract
A fuse base insulating region, for example, an insulating interlayer or a compensation region disposed in an insulating interlayer, is formed on a substrate. An etch stop layer is formed on the fuse base insulating region and forming an insulating interlayer having a lower dielectric constant than the first fuse base insulating region on the etch stop layer. A trench extending through the insulating interlayer and the etch stop layer and at least partially into the fuse base insulating region is formed. A fuse is formed in the trench. The fuse base insulating region may have a greater mechanical strength and/or density than the second insulating interlayer.