The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jan. 08, 2010
Applicants:
Yoshitaka Kuraoka, Anjo, JP;
Shigeaki Sumiya, Handa, JP;
Makoto Miyoshi, Inazawa, JP;
Minoru Imaeda, Inchinomiya, JP;
Inventors:
Yoshitaka Kuraoka, Anjo, JP;
Shigeaki Sumiya, Handa, JP;
Makoto Miyoshi, Inazawa, JP;
Minoru Imaeda, Inchinomiya, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
An underlying filmof a group III nitride is formed on a substrateby vapor phase deposition. The substrateand the underlying filmare subjected to heat treatment in the present of hydrogen to remove the underlying filmso that the surface of the substrateis roughened. A seed crystal filmof a group III nitride single crystal is formed on a surface of a substrateA by vapor phase deposition. A group III nitride single crystalis grown on the seed crystal filmby flux method.