The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Sep. 25, 2008
Hideki Arai, Shizuoka, JP;
Hideki Arai, Shizuoka, JP;
NuFlare Technology, Inc., Shizuoka, JP;
Abstract
An epitaxial growth film formation method allowing to adequately prevent the sticking phenomenon spreading over both a wafer and a susceptor when a horizontal disc-like susceptor is used to form an epitaxial growth film is provided. The epitaxial growth film formation method is a method of forming a vapor growth film on the wafer by placing the wafer having a diameter smaller than that of the susceptor approximately horizontally in substantially a center section on the horizontal disc-like susceptor, wherein the vapor growth film is formed on the wafer by bringing a circumferential recess step adjacent to a bottom inside from an edge part of the wafer and a convex step provided on a circumference of an upper surface inside from the edge part of the susceptor into contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile