The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8401044 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 19, 2013

Filed:

Jun. 02, 2011
Applicants:

Shintaro Morimoto, Atsugi, JP;

Hiroshi Mori, Atsugi, JP;

Yasuaki Nagashima, Atsugi, JP;

Inventors:

Shintaro Morimoto, Atsugi, JP;

Hiroshi Mori, Atsugi, JP;

Yasuaki Nagashima, Atsugi, JP;

Assignee:

Anritsu Corporation, Atsugi-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/10 (2006.01); H01S 3/13 (2006.01);
U.S. Cl.
CPC ...
Abstract

[Task] To provide a semiconductor light emitting element capable of emitting light beams with wavelengths in a plurality of wavelength ranges with a high optical output, a driving method of a semiconductor light emitting element capable of making a semiconductor light emitting element that can emit light beams with wavelengths in a plurality of wavelength ranges operate with a high optical output, a light emitting device, and a small and high-performance optical pulse tester using the light emitting device. [Means for Resolution] In a driving method of a semiconductor light emitting element with a configuration in which an active layerwith a gain wavelength λof about 1.55 μm and an active layerwith a gain wavelength λof about 1.3 μm are optically coupled along the guiding direction of light and are disposed in series in order of the length of the gain wavelengths λand λand a diffraction gratingwith a Bragg wavelength of the short gain wavelength λis formed near the active layerwith the short gain wavelength λand near a butt-joint coupling portionbetween the active layersand, an upper electrode provided above the active layeris short-circuited to a lower electrode provided on a bottom surface of a semiconductor substrate so that a leakage current does not flow into the active layerwhen a driving current is applied to the active layer


Find Patent Forward Citations

Morimoto, Shintaro. (2013). Semiconductor light emitting element, driving method of semiconductor light emitting element, light emitting device, and optical pulse tester using light emitting device (U.S. Patent No. 8401044). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8401044

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