The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Jan. 11, 2012
Applicants:
Haiwen Xi, Prior Lake, MN (US);
Ming Sun, Eden Prairie, MN (US);
Dexin Wang, Eden Prairie, MN (US);
Shuiyuan Huang, Apple Valley, MN (US);
Michael Tang, Bloomington, MN (US);
Song S. Xue, Edina, MN (US);
Inventors:
Haiwen Xi, Prior Lake, MN (US);
Ming Sun, Eden Prairie, MN (US);
Dexin Wang, Eden Prairie, MN (US);
Shuiyuan Huang, Apple Valley, MN (US);
Michael Tang, Bloomington, MN (US);
Song S. Xue, Edina, MN (US);
Assignee:
Seagate Technology LLC, Scotts Valley, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for making a programmable metallization memory cell are disclosed.
Xi, Haiwen. (2013). Programmable metallization memory cells via selective channel forming (U.S. Patent No. 8399908). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8399908
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile