The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Sep. 22, 2011
Hans Weber, Bayerisch Gmain, DE;
Stefan Gamerith, Villach, AT;
Roman Knoefler, Villach, AT;
Kurt Sorschag, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Hans Weber, Bayerisch Gmain, DE;
Stefan Gamerith, Villach, AT;
Roman Knoefler, Villach, AT;
Kurt Sorschag, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method for producing a semiconductor device with an electrode structure includes providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface, and forming a first trench extending from the first surface into the semiconductor body. The first trench is formed at least by removing the sacrificial layer in a section adjacent to the first surface. The method further includes forming a second trench by isotropically etching the semiconductor body in the first trench, forming a dielectric layer which covers sidewalls of the second trench, and forming an electrode on the dielectric layer in the second trench, the electrode and the dielectric layer in the second trench forming the electrode structure.