The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Jun. 06, 2011
Yosuke Akimoto, Kanagawa-ken, JP;
Akihiro Kojima, Kanagawa-ken, JP;
Miyuki Izuka, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Hiroshi Koizumi, Kanagawa-ken, JP;
Tomomichi Naka, Kanagawa-ken, JP;
Yasuhide Okada, Kanagawa-ken, JP;
Yosuke Akimoto, Kanagawa-ken, JP;
Akihiro Kojima, Kanagawa-ken, JP;
Miyuki Izuka, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Hiroshi Koizumi, Kanagawa-ken, JP;
Tomomichi Naka, Kanagawa-ken, JP;
Yasuhide Okada, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.