The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jun. 09, 2011
Franz Kreupl, München, DE;
Ritu Shrivastava, Fremont, CA (US);
Franz Kreupl, München, DE;
Ritu Shrivastava, Fremont, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The layers can be provided in a lateral arrangement, such as an end-to-end, face-to-face, L-shaped or U-shaped arrangement. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element.